Transactions on Electrical and Electronic Materials

  • 제5권5호
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  • Pages.173-179
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  • 2004
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Inclusion of Silicon Delta-doped Two-dimensional Electron Gas Layer on Multi-quantum Well Nano-structures of Blue Light Emitting Diodes

  • Kim, Keun-Joo (Department of Mechanical Engineering, Chonbuk National University)
  • 발행 : 2004.10.01
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초록

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

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피인용 문헌

  1. Fabrications and Characterizations of InGaN/GaN Quantum Well Light Emitting Devices Including Photonic Crystal Nanocavity Structures vol.22, pp.12, 2009, https://doi.org/10.4313/JKEM.2009.22.12.1045