III-V족 반도체에서 계단형 pn 접합의 해석적 항복전압 모델

Analytical Model of Breakdown Voltages for Abrupt pn Junctions in III-V Binary Semiconductors

  • 정용성 (서라벌대학 멀티미디어학부)
  • 발행 : 2004.09.01

초록

III-V족 반도체 GaP GaAs 및 InP의 계단형 pn 접합에서의 항복전압을 위한 해석적 식을 유도하였다. 해석적 항복전압을 위해 각 물질에 대한 이온화계수 파라미터를 이용하여 유효 이온화계수를 추출하였고, 이의 이온화 적분을 통해 얻은 해석적 항복전압 결과는 수치적 결과 및 실험 결과와 10% 오차 범위 이내로 잘 일치하였다.

Analytical expressions for breakdown voltages of abrupt pn junction in GaP, GaAs and InP of III-V binary semiconductors was induced. Getting analytical breakdown voltage, effective ionization coefficients were extracted using ionization coefficient parameters for each materials. The result of analytical breakdown voltages followed by ionization integral agrees well with numerical and experimental results within 10% in error.

키워드

참고문헌

  1. C. V. Shank and D. H. Auston, Science, vol. 215, pp. 797-801, 1982 https://doi.org/10.1126/science.215.4534.797
  2. J. G. Ruch and G. S. Kino, Phys. Rev., vol. 174, pp. 921-931, 1968 https://doi.org/10.1103/PhysRev.174.921
  3. W. Fawcett, A. D. Boardman and S. Swain, J. Phys. Chem. Solids, vol. 31, pp. 1963-1990, 1970 https://doi.org/10.1016/0022-3697(70)90001-6
  4. M. A. Littlejohn, J. R. Hauser and T. H. Glisson, J. Appl. Phys., vol. 48(11), pp. 5487-5190, 1977 https://doi.org/10.1063/1.323516
  5. T. J. Maloney and J. Frey, J. Appl. Phys., vol. 48, pp. 781, 1977 https://doi.org/10.1063/1.323670
  6. S. M. Sze, Physics of Semiconductor Devices, 2nd Edn. Wiley, New York, 1982
  7. Many potential applications are discussed in Proc. IEEE Conf. on High Temperature Electronics (Tuscon, AZ), IEEE 8ICH1658-4, 1981
  8. D. L. Keune, M. G. Craford, A. H. Herzog and B. J. Fitzpatrick, J. Appl. Phys., vol. 43, pp. 3417, 1972 https://doi.org/10.1063/1.1661730
  9. T. E. Zipperian, R. J. Chaffin and L. R. Dawson, IEEE Trans. Ind. Electron., vol. IE-29, pp. 130, 1982
  10. B. J. Baliga, 'Power Semiconductor Device Figure of Merit for High-Frequency Applications,' IEEE Electron Device Letters, vol.10, no.10, pp.455-457, 1989 https://doi.org/10.1109/55.43098
  11. Ali S. M. Salih et al., 'High Voltage GaAs Power Rectifiers with Low Switching and Conduction Losses,' Proc. PEDS'95, pp.259-263, Singapore, Feb.21-24 1995 https://doi.org/10.1109/PEDS.1995.404912
  12. M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, 'Velocity-field characteristics of $Ga_{1-x}In_{x}P_{1-y}As_{y}$quaternary alloy,' Appl. Phys. Lett., vol. 30, pp. 242-244, 1977 https://doi.org/10.1063/1.89350
  13. L. Aina, M. Burgess, M. Mattingly, J. M. O'connor, A. Meerschaert, M. Tong, A. Ketterson, and I. Adesida, '0.33-${\mu}m$K gate-length millimeter-wave InP-channel HEMT's with high $f_t$ and $f_{max}$,' IEEE Electron Device Lett., vol. 12, no. 9, pp. 483-485, 1991 https://doi.org/10.1109/55.116925
  14. J. D. Woodhouse, J. P. Donnelly, M. J. Manfra, and R. J. Balley, 'P-AllnAs/Inp junction FET's by selective molecular beam epitaxy,' IEEE Electron Device Lett., vol. 9, no. 11, pp. 601-603, 1988 https://doi.org/10.1109/55.9289
  15. Y. Okuto and C. R. Crowell, 'Threshold energy effect on avalanche breakdown voltage in semiconductor junction,' Solid-State Electron., vol. 18, pp. 161-168, 1975 https://doi.org/10.1016/0038-1101(75)90099-4
  16. M. H. Lee and S. M. Sze, 'Orientation dependence of breakdown voltage in GaAs,' Solid-State Electron., vol. 23, pp. 1007-1009, 1980 https://doi.org/10.1016/0038-1101(80)90072-6
  17. I. Umebu, A. N. M. M. Choudhury, and P. N. Robson, 'Ionization coefficients measured in abrupt InP junctions,' Appl. Phys. Lett. vol. 36(4), pp. 302-303, 1980 https://doi.org/10.1063/1.91470
  18. R. A. Logan and H. G. White, J. Appl. Phys., vol. 36, pp. 3945, 1965 https://doi.org/10.1063/1.1713978
  19. M. Ito, S. Kagawa, T. Kaneda, and T. Yamaoka, 'Ionization rates for electron and holes in GaAs,' J. Appl. Phys., vol. 49(8), pp. 4607~4608, 1978 https://doi.org/10.1063/1.325443
  20. S. M. Sze and G. Gibbons, 'Effect of junction curvature on breakdown voltage in semiconductors,' Solid-State Electron., vol. 9, pp. 831~845, 1966 https://doi.org/10.1016/0038-1101(66)90033-5
  21. C. A. Armiento, S. H. Groves, and C. E. Hurwitz, 'Ionization coefficients of electrons and holes in InP,' Appl. Phys. Lett. vol. 35(4), pp. 333-335. 1979 https://doi.org/10.1063/1.91111
  22. C. W. Kao and C. R. Crowell, 'Impact ionization by electrons and holes in InP,' Solid-State Electron., vol. 23, pp. 881-891, 1980 https://doi.org/10.1016/0038-1101(80)90106-9
  23. S. L. Miller, 'Ionization rates for holes and electrons in silicon,' Physical Review, vol. 105, no. 4, pp. 1246-1249. 1957 https://doi.org/10.1103/PhysRev.105.1246
  24. G. A. Baraff, Phys. Rev., vol. 128, pp. 2507, 1962 https://doi.org/10.1103/PhysRev.128.2507
  25. C. R. Crowell and S. M. Sze, Appl. Phys. Lett., vol. 9, pp. 242, 1966 https://doi.org/10.1063/1.1754731
  26. Y. Okuto and C. R. Crowell, Phys. Rev., vol. B6, pp. 3076, 1972 https://doi.org/10.1103/PhysRevB.6.3076
  27. J. R. Hauser, 'Avalanche breakdown voltages for III-V semiconductors,' Appl. Phys. Lett., vol. 33(4), no. 15, pp. 351-353, 1978 https://doi.org/10.1063/1.90334
  28. H. Kressel and G. Kupsky, 'The effective rate for hot carriers in GaAs,' INT. J. Electronics, vol. 20, no. 6, pp. 535-543, 1966 https://doi.org/10.1080/00207216608937887
  29. G. E. Bulman, V. M. Robbins, K. F. Brennan, K. Hess, and G. E. Stillman, 'Experimental determination of impact ionization coefficient in (100) GaAs,' IEEE Electron Devices Letters, vol. EDL-4, no. 6, pp. 181-185, 1993
  30. T. P. Pearsall, F. Capasso, R. E. Nahory, M. A. Pollack, and J. R. Chelikowsky, 'The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs,' Solid-State Electron., vol. 21, pp. 297-302, 1978 https://doi.org/10.1016/0038-1101(78)90151-X
  31. W. Fulop, 'Calculation of avalanche breakdown of silicon p-n junctions,' Solid-State Electron., vol. 10, pp. 39-43, 1967 https://doi.org/10.1016/0038-1101(67)90111-6
  32. K. G. McKay, 'Avalanche breakdown in silicon,' Phys. Rev., vol. 94, no. 4, pp. 877-884, 1954 https://doi.org/10.1103/PhysRev.94.877
  33. P. Mars, 'Temperature dependence of avalanche breakdown voltage in p-n junctions,' Int. J. Electronics, vol. 32, no. 1, pp. 23-37, 1971 https://doi.org/10.1080/00207217208938266
  34. A. Shimizu and T. Koshimizu, 'Avalanche breakdown voltage of GaAs hyperabrupt junctions,' Solid-State Electron., vol. 24, pp. 1155-1160, 1981 https://doi.org/10.1016/0038-1101(81)90184-2
  35. W. J. Devlin, K. T. Ip, D. P. Leta, L. F. Eastman, G. H. Morrison, and J. Comas, Proceeding of International Conference on Gallium Arsenide and Related Compounds, St. Louis, pp. 510, 1978 (Institute of Physics, London, 1979)
  36. K. Nishida, K. Taguchi, and Y. Matsumoto, 'InGa AsP hetero-structure avalanche photo- diodes with high avalanche gain,' Appl. Phys. Lett., vol. 35, pp. 251, 1979 https://doi.org/10.1063/1.91089