참고문헌
- IEEE Trans. Electron Devices v.48 Undoped AlGaN/GaN HEMTs for microwave power amplification L. F. Eastman;V. Tilak;J. Smart;B. M. Green;E. M. Chumbes;R. Dimitrov;H. Kim;O. S. Ambacher;N. Weimann;T. Prunty;M. Murphy;W. J. Schaff;J. R. Shealy https://doi.org/10.1109/16.906439
- IEEE Electron Device Lett. v.20 no.9 Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs I. Daumiller;C. Kirchner;M. Kamp;K. J. Ebeling;E. Kohn https://doi.org/10.1109/55.784448
- IEEE Electron Device Lett. v.25 Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs A. Chini;D. Buttari;R. Coffie;L. Shen;S. Heikman;A. Chakraborty;S. Keller;U. K. Mishra https://doi.org/10.1109/LED.2004.826525
- IEDM Tech. Dig. A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate Y. Ando;Y. Okamoto;H. Miyamoto;N. Hayama;T. Nakayama;K. Kasahara;M. Kuzuhara
- IEEE MTT-S Int. Microwave Symp. Workshop Note A high power and high efficiency GaN HEMT amplifier for W-CDMA base station applications N. Adachi;N. Hara;K. Joshin;M. Kanamura;T. Kikkawa;M. Nishi;M. Tanaka;Y. Tateno;S. Yokokawa;M. Yokoyama
- J. Appl. Phys. v.86 GaN: processing, defects, and devices S. J. Pearton;J. C. Zolper;R. J. Shul;F. Ren
- IEEE Electron Device Lett. v.25 no.3 30-W/mm GaN HEMTs by field plate optimization Y. -F. Wu;A. Saxler;M. Moore;R. P. Smith;S. Sheppard;P. M. Chavarkar;T. Wisleder;U. K. Mishra;P. Parikh https://doi.org/10.1109/LED.2003.822667
- IEEE Trans. Electron Devices v.51 no.2 Performance of the AlGaN HEMT structure with a gate extension R. Thompson;T. Prunty;V. Kaper;J. R. Shealy https://doi.org/10.1109/TED.2003.822036
-
IEEE Microwave Wireless Compon. Lett.
v.13
no.3
Millimeter-wave high-power 0.25-
${\mu}m$ gate-length AlGaN/GaN HEMTs on SiC substrates R. S. Schwindt;V. Kumar;A. Kuliev;G. Simin;J. W. Yang;M. A. Khan;M. E. Muir;I. Adesida https://doi.org/10.1109/LMWC.2003.810115 - IEEE Electron Device Lett. v.24 no.10 AlGaN/GaN HEMTs on SiC with CW power performance of>4 W/mm and 23% PAE at 35 GHz C. Lee;P. Saunier;J. Yang;M. A. Khan https://doi.org/10.1109/LED.2003.817383
- IEEE Trans. Electron Devices v.48 The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs R. Vetury;N. Q. Zhang;S. Keller;U. K. Mishra https://doi.org/10.1109/16.906451
- J. Appl. Phys. v.85 no.6 Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures O. Ambacher;J. Smart;J. R. Shealy;N. G. Wiemann;K. Chu;M. Murphy;W. J. Schaff;L. F. Eastman;R. Dimitrov;L. Wittmer;M. Stutzman;W. Rieger;J. Hilsenbeck https://doi.org/10.1063/1.369664
- IEEE Electron Device Lett. v.21 The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs B. M. Green(et al.) https://doi.org/10.1109/55.843146
- IEEE Electron Device Lett. v.24 Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates N. G. Weimann;M. J. Manfra;T. Wachtler https://doi.org/10.1109/LED.2002.807693
- IEEE Electron Device Lett. v.25 no.1 High-power polarization engineered GaN/AlGaN/GaN HEMTs without surface passivation L. Shen;R. Coffie;D. Buttari;S. Heikman;A. Chakraborty;A. Chini;S. Keller;S. P. DenBaars;U. K. Mishra https://doi.org/10.1109/LED.2003.821673
- Jpn. J. Appl. Phys. v.38 no.7B Enhanced electron mobility in AlGaN/InGaN/AlGaN double-heterostructures by piezoelectric effect N. Maeda;T. Saitoh;K. Tsubaki;T. Nishida;N. Kobayashi https://doi.org/10.1143/JJAP.38.L799
- Jpn. J. Appl. Phys. v.40 no.11A AlGaN/InGaN/GaN double heterostructure field effect transistor G. Simin;X. Hu;A. Tarakji;J. Zhang;A. Koudymov;S. Saygi;J. Yang;A. Khan;M. S. Shur;R. Gaska https://doi.org/10.1143/JJAP.40.L1142
- IEEE Electron Device Lett. v.22 no.11 Device characteristics of the GaN/InGaN-doped channel HFETs Y. -M. Hsin;H. -T. Hsu;C. -C. Cho;J. -I. Chyi https://doi.org/10.1109/55.962643
- IEEE Electron Device Lett. v.22 no.11 Power electronics on InAlN/(In)GaN:Prospect for a record performance J. Kuzmik https://doi.org/10.1109/55.962646
-
Electron. Lett.
v.39
no.22
High performance 0.25
${\mu}m$ gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz V. Kumar;J. -W. Lee;A. Kuliev;O. Aktas;R. Schwindt;R. Birkhahn;D. Gotthold;S. Guo;B. Albert;I. Adesida https://doi.org/10.1049/el:20030985 - IEEE Trans. Electron Devices v.48 no.3 Trapping effects and microwave power performance in AlGaN/GaN HEMTs S. C. Binari;K. Ikossi;J. A. Roussos;W. Kruppa;D. Park;H. B. Dietrich;D. D. Koleske;A. E. Wickenden;R. L. Henry https://doi.org/10.1109/16.906437
- DIVA User Manual Accent Optical Technologies, Inc.
- IEDM Tech. Dig. Experimental/numerical investigation on current collapse in AlGaN/GaN HEMTs G. Verzellesi;R. Pierobon;F. Rampazzo;G. Meneghesso;A. Chini;U. K. Mishra;C. Canali;E. Zanoni
- IEEE MTT-S Int. Microwave Symp. Digest. v.3 AlGaN/GaN HFET amplifier performance and limitations R. J. Trew