한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제17권9호
  • /
  • Pages.947-952
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  • 2004
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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졸겔법으로 제조된 Tb-doped PZT 박막의 강유전 특성

Ferroelectric Properties of Tb-doped PZT Thin films Prepared by Sol-gel Process

  • 손영훈 (중앙대학교 전자전기공학부) ;
  • 김경태 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • 발행 : 2004.09.01
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초록

Tb-doped lead zirconate titanate(Pb(Zr$\_$0.6/,Ti$\_$0.4/)O$_3$; PZT) thin films on Pt(111)/Ti/SiO$_2$/Si(100) substrates were fabricated by the sol-gel method. The effect on the structural and electrical properties of films measured according to Tb content. The dielectric and ferroelectric properties of Tb-doped PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. The relative dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.024, respectively. Typical value of the swichable remanent poaraization(2Pr) and the coercive filed of the PZT film capacitor for 0.3 mol% Tb-doped were 61.4 ${\mu}$C/cm$^2$ and 61.9 kV/cm, respectively. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

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참고문헌

  1. 전기전자재료학회논문지 v.7 no.5 강유전체 박막의 제조 기술 및 응용 최준후;이승석;김호기
  2. 전기전자재료학회논문지 v.7 no.2 졸-갤법으로 형성한 강유전체 PZT 박막의 고온 단시간 열처리효과 및 전자 디바이스에의 응용 김광호
  3. 전기전자재료학회논문지 v.7 no.6 Sol-Gel 법에 의한 강유전체 Pb(Zr,Ti) O₃의 제조 및 특성에 관한 연구 임정한;김영식;장복기
  4. Jpn. J. Appl. Phys. v.33 Characteristic change due to polarization fatigue of sol-gel ferroelectric Pb ($Zr_{0.4}Ti_{0.6}$)O₃thin-film capacitors T. Milhara;H. Watanabe;C. A. Paz de Araujo https://doi.org/10.1143/JJAP.33.5281
  5. phys. stat. sol. v.a no.151 Minimization of fatigue in ferroelectric films S. B. Desu
  6. J. Appl. Phys. v.90 no.6 Effect of neodymium (Nd) doping on the dielectric and ferroelectric characteristics of sol-gel derived lead ziroconate titanate (53/47) thin films S. B. Majumder;B. Roy;R. S. Katiyar https://doi.org/10.1063/1.1391416
  7. Ferroelectric materials and their applications Y. Xu
  8. J. Appl. Phys. v.92 no.5 Self-limiting behavior of the grain growth in lead zirconate titanate thin films J. Lee;S. Joo https://doi.org/10.1063/1.1496147
  9. Jpn. J. Appl. Phys. v.41 no.3A Characterization of secondary phases in lead zirconate titanate film surface deposited with excess lead content G. S. Park;I. S. Chung https://doi.org/10.1143/JJAP.41.1519
  10. Thin Solid Films v.402 Microstructural chacterization of donordoped lead zirconate titanate films prepared by sol-gel processing Q. Zou;H. Ruda;B. G. Yacobi;M. Farrell https://doi.org/10.1016/S0040-6090(01)01708-4
  11. J. Appl. Phys. v.79 Effect of B-site cation stoichmetry on electrical fatigue of RuO₂/Pb(Zrχ,Ti₁-χ)O3/RuO₂capacitors H. N. Al-Shareef;B. A. Tuttle;W. L. warren;T. J. Headley;D. Dimos;J. A. Voigt;R. D. Nasby https://doi.org/10.1063/1.360888
  12. Jpn. J. Appl. Phys. v.33 no.1A Effects of seeding layer on perovskite transformation, microstructure and transmittance of sol-gel-processed lanthanum-modified lead zirconate titanate films J. S. Lee;C. J. Kim;D. S. Yoon;C. G. Choi;J. M. Kim;K. No https://doi.org/10.1143/JJAP.33.260