참고문헌
- IEEE Electron Devices Lett. v.17 Low Temperature Poly-Si Thin-Film Transistor Fabrication by Metal-Induced Lateral Crystallization S. W. Lee;S. K. Joo https://doi.org/10.1109/55.485160
- IEEE Trans. Electron Devices v.47 no.5 Characterization of the MIC/MJLC Interface and It's Effects on the Performance of MILC Thin-Film Transistors M. Wong;Z. Jin;G. A. Bhat;P. C. Wong;H. S. Kwok https://doi.org/10.1063/1.113888
- IEEE Trans. Electron Devices v.47 no.2 High Performance Low Temperature Metal-Induced Unilaterally Crystallized Polycrystalline Silicon Thin Film Transisters for System-on Panel Applications Z. Meng;M. Wang;M. Wong https://doi.org/10.1109/16.841241
- Microelectronics Reliability v.39 A Study on the Leakage Current of Poly-Si TFTs Fabricated by Metal Induced Lateral Crystallization T.-H. Ihn;T.-K. Kim;B-I. Lee;S.-K. Joo https://doi.org/10.1109/16.822287
- IEEE Trans. Electron Devices v.50 no.12 The Electrical Characteristics of MILC Poly-Si TFTs with Long Ni-Offset Structure G.-B. Kim;Y-G. Yoon;M.-S. Kim;H.-J. Jung;S.-W. Lee;S.-K. Joo https://doi.org/10.1016/S0026-2714(98)00160-7
- J. Appl. Phys. v.73 no.12 Silicide Formation and Silicide-Dediated Crystallization of Nickel-Implanted Amorphous Silicon Films C. Hayzelden;J. L. Batstone https://doi.org/10.1109/TED.2003.818154
- J. Vac. Sci. Tech. v.19 Interface Enhanced Raman Scattering Study of the Interfacial Reaction of Pd on a-Si:H R. J. Nemanich;C. C. Tsi;M. J. Thompson;T. W. Sigmon https://doi.org/10.1063/1.353446
- Appl. Phys. Lett. v.55 no.7 Selective Area Crystallization of Amorphous Silicon Films by Low-Temperature Rapid Thermal Annealing G. Liu;S. J. Fonach https://doi.org/10.1116/1.571085
- Appl. Phys. Lett. v.66 no.13 Pd Induced Lateral Crystallization of Amorphous Si Thin Films S. W. Lee;Y C. Jeon;S. K. Joo https://doi.org/10.1063/1.101814
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J. Appl. Phys.
v.85
no.10
Pd
$_2$ Si- Assisted Crystallization of Amorphous Silicon Thin Films at Low Temperature S.-W. Lee;B-I. Lee;T.-K. Kim;S.-K. Joo https://doi.org/10.1063/1.370529 - Phys. Rev. B v.44 no.18 The Activation Strain Tensor : Nonhydrostatic Stress Effect on Crystal Growth Kinetics M. J. Aziz;P. C. Sabin;G.-Q. Lu https://doi.org/10.1103/PhysRevB.44.9812
- Appl. Phys. Lett. v.47 no.3 Effect of Pressure on the Solid Phase Epixial Regrowth Rate of Si E. Nygren;M. J. Aziz;D. Tunbull;J. M. Poate;D. C. Jacobson;R. Hull https://doi.org/10.1063/1.96228
- J. Appl. Phys. v.70 no.10 Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge : Implications for Point-Defect Mechanisms G. Q. Lu;E. Nygren;M. I. Aziz https://doi.org/10.1063/1.350243