DOI QR코드

DOI QR Code

Effect of Adjacent Pd on Ni-MILC

인접 Pd-MILC가 Ni-MILC에 미치는 영향

  • Published : 2004.08.01

Abstract

In this study, we proposed the novel method that can crystallize the amorphous silicon by adjacent Pd-MILC enhanced Ni-MILC. With this method, the MILC rate was about 15 ${\mu}$m/h at 550$^{\circ}C$ which is four times faster than conventional MILC rate. The crystallization rate increased rapidly with the spacing between Ni and Pd decreased. And it was independent on Ni and Pd layer thickness and amorphous silicon active width. However, when Pd was capped by a Ni layer, there's no enhancement on Ni-MILC. This phenomenon implies that the enhancement of Ni-MILC rate comes from not Pd material itself but Pd-MILC induced tensile stress. We can explain these phenomena with a novel MILC mechanism.

본 연구에서는 Palladium-Metal Induced Lateral Crystallization(Pd-MILC)과 Nickel-Metal Induced Lateral Crystallization (Ni-MILC)을 동시에 사용하여 Ni-MILC의 결정화 속도를 향상시키는 방법을 제안하였다 이 방법을 사용하여 기존의 Ni-MILC 보다 거의 4배나 빠른 결정화 속도인 15 $\mu$m/h를 얻을 수 있었다. Ni과 Pd의 간격이 좁을수록 Ni-MILC의 결정화 속도가 더 빨라졌으며 Pd두께, Ni두께에, 비정질 실리콘 너비와는 큰 의존관계가 없었다. 하지만 Pd이 Ni에 의해 덮혀져 Pd-MILC가 일어나지 못하는 경우에는 이러한 현상이 발견되지 않았다. 이는 Pd물질 그 자체가 Ni-MILC를 향상시키는 것이 아니라 Pd MILC가 진행되면서 발생하는 tensile stress에 의해 향상되는 것임을 의미한다. 이와 같은 현상들을 새로운 MILC mechanism으로 설명하였다.

Keywords

References

  1. IEEE Electron Devices Lett. v.17 Low Temperature Poly-Si Thin-Film Transistor Fabrication by Metal-Induced Lateral Crystallization S. W. Lee;S. K. Joo https://doi.org/10.1109/55.485160
  2. IEEE Trans. Electron Devices v.47 no.5 Characterization of the MIC/MJLC Interface and It's Effects on the Performance of MILC Thin-Film Transistors M. Wong;Z. Jin;G. A. Bhat;P. C. Wong;H. S. Kwok https://doi.org/10.1063/1.113888
  3. IEEE Trans. Electron Devices v.47 no.2 High Performance Low Temperature Metal-Induced Unilaterally Crystallized Polycrystalline Silicon Thin Film Transisters for System-on Panel Applications Z. Meng;M. Wang;M. Wong https://doi.org/10.1109/16.841241
  4. Microelectronics Reliability v.39 A Study on the Leakage Current of Poly-Si TFTs Fabricated by Metal Induced Lateral Crystallization T.-H. Ihn;T.-K. Kim;B-I. Lee;S.-K. Joo https://doi.org/10.1109/16.822287
  5. IEEE Trans. Electron Devices v.50 no.12 The Electrical Characteristics of MILC Poly-Si TFTs with Long Ni-Offset Structure G.-B. Kim;Y-G. Yoon;M.-S. Kim;H.-J. Jung;S.-W. Lee;S.-K. Joo https://doi.org/10.1016/S0026-2714(98)00160-7
  6. J. Appl. Phys. v.73 no.12 Silicide Formation and Silicide-Dediated Crystallization of Nickel-Implanted Amorphous Silicon Films C. Hayzelden;J. L. Batstone https://doi.org/10.1109/TED.2003.818154
  7. J. Vac. Sci. Tech. v.19 Interface Enhanced Raman Scattering Study of the Interfacial Reaction of Pd on a-Si:H R. J. Nemanich;C. C. Tsi;M. J. Thompson;T. W. Sigmon https://doi.org/10.1063/1.353446
  8. Appl. Phys. Lett. v.55 no.7 Selective Area Crystallization of Amorphous Silicon Films by Low-Temperature Rapid Thermal Annealing G. Liu;S. J. Fonach https://doi.org/10.1116/1.571085
  9. Appl. Phys. Lett. v.66 no.13 Pd Induced Lateral Crystallization of Amorphous Si Thin Films S. W. Lee;Y C. Jeon;S. K. Joo https://doi.org/10.1063/1.101814
  10. J. Appl. Phys. v.85 no.10 Pd$_2$Si- Assisted Crystallization of Amorphous Silicon Thin Films at Low Temperature S.-W. Lee;B-I. Lee;T.-K. Kim;S.-K. Joo https://doi.org/10.1063/1.370529
  11. Phys. Rev. B v.44 no.18 The Activation Strain Tensor : Nonhydrostatic Stress Effect on Crystal Growth Kinetics M. J. Aziz;P. C. Sabin;G.-Q. Lu https://doi.org/10.1103/PhysRevB.44.9812
  12. Appl. Phys. Lett. v.47 no.3 Effect of Pressure on the Solid Phase Epixial Regrowth Rate of Si E. Nygren;M. J. Aziz;D. Tunbull;J. M. Poate;D. C. Jacobson;R. Hull https://doi.org/10.1063/1.96228
  13. J. Appl. Phys. v.70 no.10 Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge : Implications for Point-Defect Mechanisms G. Q. Lu;E. Nygren;M. I. Aziz https://doi.org/10.1063/1.350243