참고문헌
- J. Appl. Phys. v.75 no.7 Effects of finite junction length on the vortex-flow transistor James H. Thompson;James B. Beyer;James E. Nordman https://doi.org/10.1063/1.356081
- IEEE Trans. Appl. Supercon. v.3 no.1 Superconducting flux flow digital circuits J. S. Martens;V. M. Hietala;T. A. Plut;D. S. Ginley;G. A. Vawter;C. P. Tigges;M. P. Siegal https://doi.org/10.1109/77.233545
- IEEE Trans. Electron. Devices v.40 no.3 Superconducting flux flow digital circuts J. S. Martens;T. E. Zipperian;V. M. Hietala;D. S. Ginley;C. P. Tigges;J. M. Philips;M. P. Siegal https://doi.org/10.1109/16.199373
- J. Appl. Phys. v.65 no.10 S parameter measurenets on single superconducting thin flim three terminal devices made of high-tc and low-tc materials J. S. Martens;G. K. G. Hohenwarter;J. B. Beyer;J. E. Nordman https://doi.org/10.1063/1.343332
- 전지전자재료학회논문지 v.14 no.2 새로운 ICP 장치를 이용한 고온 초전도체의 D교 Etching과 기존의 Wet Etching 기술과의 비교 강형곤;임성훈;임연호;한윤봉;황종선;한병성
- 전지전자재료학회논문지 v.16 no.5 플라즈마 식각을 이용한 초전도 자속 흐름 트랜지스터 강형곤;고석철; 최명호;한윤봉;한병성
- Sensors and Actuators A Supercondcting flux flow sensor used for a thermal detection Seokcheol Ko;Hyeong-Gon Kang;Sung-Hun Lim;Byoung-Sung Han
- 전기전자재료학회논문지 v.16 no.10 다채널 고온 초전도 볼텍스 유동 트랜지스터의 I-V 특성 해석 고석철;강형곤; 임성훈;최효상;한병성
- IEEE Trans. Appl. Supercon. v.1 no.2 A model and eqivalent circuit for a superconducting flux flow transistor J. S. Martens;D. S. Ginley;J. B. Beyer https://doi.org/10.1109/77.84615
- IEEE Trans. on Appl. Supercond. v.5 no.2 Characteristics of high-tc superconducting flux flow transistors with submicron channels K. Miyahara;K. Tsutu;S. Kubo;M. Suzuki https://doi.org/10.1109/77.403317
- J. Appl. Phys. v.75 no.1 vortex flow characteristics of high-tc flux flow transistors K. Miyahara;S. Kubo;M. Suzuki https://doi.org/10.1063/1.355865
- Materials Science and Engineering B v.102 conditions of icp for a superconducting flux flow transistor and its etching characteristics Hyeong-Gon Kang;Sung-Hun Lim;Byoung-Sung Han;Hyo-Sang Choi;Yoon-Bong Hahn https://doi.org/10.1016/S0921-5107(02)00616-5
- Processing of the IEEE v.85 no.4 STM/AFM Nano Oxidation Process to Room-Temperature Operated Single-Electron Transistor and Other Devices K. Matsumoto https://doi.org/10.1109/5.573745
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Physical Review B
v.47
no.14
theoretical study of electric field effects in high-
$t_c$ oxide superconductor using an ultrathin-metal-insulator superlattice model S. Sakai https://doi.org/10.1103/PhysRevB.47.9042 - Appl. Phys. Lett. v.76 no.5 Fabrication of a josephson junction using an atomic force microscope Insang Song;Byong Man Kim;Gwangseo Park https://doi.org/10.1063/1.125830
- Nuclear Instruments and Methods in Physics Research B v.200 AFM anodization studied by spectromicrocsopy M. Lazzarino;S. Heun;B. Ressel;K. C. Prince;P. Pingue;C. Ascoli https://doi.org/10.1016/S0168-583X(02)01673-7
- Ultramicroscopy v.91 A study of positive charge effect on AFM anodization lithography using metal phosphate monolayers Sang Min Kim;Sang Jung Ahn;Haeseing Lee;Eung Ryul Kim;Haiwon Lee https://doi.org/10.1016/S0304-3991(02)00096-7
- Diamond and Related Materials v.11 Fabrication of diamond single-hole transistors using AFM anodization Tokishige Banno;Minoru Tachiki;Hokuto Seo;Hitoshi Umezawa;Hiroshi https://doi.org/10.1016/S0925-9635(01)00655-0
- Mater. Sci. and Engineering C v.19 EBL-and AFM-based techniques for nanowires fabrication on Si/SiGe A. Notargiacomo;E. Giovine;F. Evangelisti;V. Foglietti;R. Leoni https://doi.org/10.1016/S0928-4931(01)00483-0
- Mater. Sci. and Engineering C v.24 Fabrication of nanostructures using scanning probe microscope lithography Seunghyun Lee;Jungoh Kim;Wan Sub Shin;Ha-Jin Lee;Sunyoung Koo;Haiwon Lee https://doi.org/10.1016/j.msec.2003.09.001