KIEE International Transactions on Electrophysics and Applications

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

Fabrication and Characterization of Silicon Probe Tip for Vertical Probe Card Using MEMS Technology

  • Kim, Young-Min (Department of Electronics, Kyungpook National University) ;
  • Yu, In-Sik (Mobile Information Communication, Kyungdong College of Techno-Informatio) ;
  • Lee, Jong-Hyun (Department of Electronics, Kyungpook National University)
  • 발행 : 2004.08.01
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초록

This paper presents a silicon probe tip for vertical probe card application. The silicon probe tip was fabricated using MEMS technology such as porous silicon micromachining and deep- RIE (reactive ion etching). The thickness of the silicon epitaxial layers was 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$, respectively. The width and length were 40 ${\mu}{\textrm}{m}$ and 600 ${\mu}{\textrm}{m}$, respectively. The probe structure was a multilayered structure and was composed of Au/Ni-Cr/Si$_3$N$_4$/n-epi layers. The height of the curled probe tip was measured as a function of the annealing temperature and time. Resistance characteristics of the probe tip were measured using a touchdown test.

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참고문헌

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