Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A CMOS Bandgap Reference Voltage Generator for a CMOS Active Pixel Sensor Imager

  • Kim, Kwang-Hyun (Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology) ;
  • Cho, Gyu-Seong (Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology) ;
  • Kim, Young-Hee (Department of Electronic Engineering Changwon National University)
  • Published : 2004.04.01
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Abstract

This paper proposes a new bandgap reference (BGR) circuit which takes advantage of a cascode current mirror biasing to reduce the V$\_$ref/ variation, and sizing technique, which utilizes two related ratio numbers k and N, to reduce the PNP BJT area. The proposed BGR is designed and fabricated on a test chip with a goal to provide a reference voltage to the 10 bit A/D(4-4-4 pipeline architecture) converter of the CMOS Active Pixel Sensor (APS) imager to be used in X-ray imaging. The basic temperature variation effect on V$\_$ref/ of the BGR has a maximum delta of 6 mV over the temperature range of 25$^{\circ}C$ to 70$^{\circ}C$. To verify that the proposed BGR has radiation hardness for the X-ray imaging application, total ionization dose (TID) effect under Co-60 exposure conditions has been evaluated. The measured V$\_$ref/ variation under the radiation condition has a maximum delta of 33 mV over the range of 0 krad to 100 krad. For the given voltage, temperature, and radiation, the BGR has been satisfied well within the requirement of the target 10 bit A/D converter.

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References

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