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UV nanoimprint lithography using a multi-dispensing method

다중 디스펜싱 방법에 의한 UV-나노임프린트 리소그래피

  • 심영석 (한국기계연구원 나노메카니즘그룹) ;
  • 손현기 (한국기계연구원 레이저응용시스템그) ;
  • 신영재 (한국기계연구원 나노메카니즘그) ;
  • 이응숙 (한국기계연구원 지능형정밀기계연구) ;
  • 정준호 (한국기계연구원 나노메카니즘그룹)
  • Published : 2004.07.01

Abstract

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of transferred nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a $5\times5\times0.09$ in. quartz stamp whose critical dimension is 377 nm was fabricated using the etching process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply the fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer. Experiments have shown that the multi-dispensing method can enable UV-NIL using a large-area stamp.

Keywords

References

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