친수성 고분자를 이용한 고정입자패드의 텅스텐 CMP

Tungsten CMP in Fixed Abrasive Pad using Hydrophilic Polymer

  • 박범영 (부산대학교 대학원 정밀기계공학과) ;
  • 김호윤 ;
  • 김형재 (부산대학교 대학원 정밀기계공학) ;
  • 김구연 (부산대학교 대학원 정밀기계공학) ;
  • 정해도 (부산대학교 정밀정형 및 금형가공 연구소)
  • 발행 : 2004.07.01

초록

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

키워드

참고문헌

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