Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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An Analysis of the 1/f Noise Characteristics of Pocket Implanted MOSFETS

포켓 이온 주입된 MOSFET소자의 1/f 잡음 특성

  • Published : 2004.05.01
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Abstract

The anomalous behavior of the 1/f noise of halo or pocket ion implanted MOSFETs is investigated. The model for the anomalous 1/f noise behaviors of MOSFETs, which consist of inhomogeneous conductance along the channel is improved within a regional approximation as previous works and presented in a fen directly applicable to halo MOSFETs. The presented model reduces to the previous results, discussed in the linear region operation, for small drain bias. Comparisons with experimental results show that the 1/f model based on the regional approach can be applicable for limited ranges, especially for sufficiently large gate bias voltages.

본 연구에서는 소오스와 드레인 근처에 포켓형상으로 이온이 주입되어 halo구조를 갖고 있는 MOSFET 소자의 1/f 잡음 특성에 대하여 고찰하였다. 채널 방향으로 전도도가 균일하지 않은 MOSFET 소자가 선형영역에서 동작할 때, 영역구분 근사기법(regional approach)을 근간으로 논의된 기존의 1/f 잡음모델을 영역별로 서로 다른 전기적 성질이 정의될 수 있는 halo MOSFET 소자에 적용하여 그 타당성을 조사하였다. 잡음모델의 검증을 위하여 기존의 모델에서와 같이 영역구분 근사를 사용하여 보다 넓은 동작범위에서 적용될 수 있도록 기존의 모델식을 개선하였다. 개선된 잡음식은 선형영역에서 기존에 보고된 잡음식에 수렴한다. 실험적으로 측정된 1/f 잡음 특성과의 비교에서 영역구분 근사기법으로 정리된 잡음식은 게이트 전압이 비교적 큰 경우에 한해서 적용될 수 있음을 보였다.

Keywords

References

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