한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제17권4호
  • /
  • Pages.367-372
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  • 2004
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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HBT의 전류원 모델을 위한 최적 열 저항값 추출 방법

Optimal Thermal Resistance Extraction Method for the Current Source Model of HBT

  • 발행 : 2004.04.01
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초록

Two new extraction methods for the thermal Resistance of HBT(Heterojunction Bipolar Transistors) are proposed. First, the analytical expression, based on the thermal characteristics that the base to emitter junction voltage drops with the increase of junction temperature, is derived. Second, the thermal resistance equation that can predict the measured DC(Direct Current) data optimally is derived. These optimal thermal resistance expression is applied to the 2 finger 2${\times}$20${\mu}{\textrm}{m}$-AlGaAs/GaAs HBT and shows the good agreement with the measured data.

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참고문헌

  1. Electrical and thermal characterization of MESFETs, HEMTs, and HBTs R,Anholt
  2. IEEE Trans. on Electron Devices v.37 no.10 The DC cliaracteristics of GaAs/AIGEIAs heterojunction bipolar transis. tors with application to device modeling M.E.Hafizi;C.R.Crowell;M.E.Grupen https://doi.org/10.1109/16.59900
  3. IEEE Trans. on Electron Devices v.39 no.10 CW meastlrement of HBT thermal resistance D.E.Dawson;A.K.Gupta https://doi.org/10.1109/16.158793
  4. EUMA(European Microwave Association) - GAAS 2003 Conference Proceedings Optimal parameter extraction scheme of current source and bias dependent elements fo HBT by searching the whole unknown space Y.Suh;I.S.Kim;J.S.Song
  5. IEEE 2000-MIT Symposium Digest Direct extraction metllod for intemal equivalent circult para meters of HBT small signal hybrid- pi model Y.Suh;D.Heo;E.Seok;A.Raghavan;J.Laskar;B.kim https://doi.org/10.1109/MWSYM.2000.862236
  6. IEEE Trans. on Electron Devices v.42 no.12 A new DC model of HBTs including self- heating effect stutable for circuit simulators J.Dupuis;R.Hajji;F.M.Ghannouchi https://doi.org/10.1109/16.477758
  7. IEEE GaAs IC Symposium Parameter extraction for HBT's temperature dependent large signal equivalent circuit model P.Baureis;D.Seitzer https://doi.org/10.1109/GAAS.1993.394455