참고문헌
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- Sen. Actuators A v.82 Silicon carbide as a new MEMS technology P.M.Sarro https://doi.org/10.1016/S0924-4247(99)00335-0
- IEEE Electron Device Lett. v.EDL-15 RF performance of SiC MESFET's on high resistivity substrates S.Sriram;R.C.Clarke;A.A.Burk,Jr.;H.M.Hobgood;P.G.McMullin;P.A.Orphanos;R.R.Siergiej;T.J.Smit;C.D.Brandt;M.C.Driver;R.H.Hopkins
- Appl. Phys. Lett. v.67 Low damage and residue-free dry etching of 6H-SiC using electron cyclotron resonance plasma K.Xie;J.R.Femish;J.H.Zhap;W.R.Buchwald;L.Cacas https://doi.org/10.1063/1.114631
- Phys. Stat. Sol. (b) v.202 A review of SiC reactive ion etching in fluorinated plasmas P.H.Yih;V.Saxena;A.J.Steck https://doi.org/10.1002/1521-3951(199707)202:1<605::AID-PSSB605>3.0.CO;2-Y
- Kyoto, Japan, Ser, no.142 Silicon Carbide and related Materials, International Physics Conference M.G.Rastegaeva;A.N.Andreev;V.V.Zelenin;A.I.Bahanin;I.P.Nikitina;V.E.Chelnokov;V.P.Rastegaev
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Appl. Phys. Lett.
v.76
High rate etching of 4H-SiC using a
$SF_6$ /O₂helicon plasma P.Chabert;N.Proust;J.Perrin;R.W.Boswell https://doi.org/10.1063/1.126329 - 전기전자재료학회논문지 v.15 no.11 Shigehiro Nishino, "Si(100)기판 위에 성장된 3C-SiC 박막의 물리적 특성 정귀상;정연식
- J. Vac. Sci. Technol. B v.4(1) Reactive ion etching of sic thin films using fluorinated gases J.Sugiura;W.J.Lu;K.C.cadien;A.J.steckl https://doi.org/10.1116/1.583329
- J. Vac. Sci. Technol. B v.19 Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms Chabert,P. https://doi.org/10.1116/1.1387459
피인용 문헌
- Preparation and application of the 3C–SiC substrate to piezoelectric micro cantilever transducers vol.108, pp.1, 2012, https://doi.org/10.1007/s00339-012-6866-x