Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Bonding structure of the DLC films deposited by RE-PECVD

RE-PECVD법에 의해 증착된 DLC박막의 결합 특성

  • 최봉근 (CPRC, 한양대학교 세라믹공학과) ;
  • 신재혁 (산업자원부 기술표준원 광전재료과) ;
  • 안종일 (산업자원부 기술표준원 광전재료과) ;
  • 심광보 (CPRC, 한양대학교 세라믹공학과)
  • Published : 2004.02.01
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Abstract

The diamond-like carbon (DLC) films were deposited on the Si (100) wafer by a rf-PECVD method as a function of the mixture rate of methane-hydrogen gas and bias voltage. The bonding structure and mechanical properties of these deposited DLC films were investigated using FT-IR, Raman, and nano-indenter. The deposition rates of DLC films increased with increased flow rate of methane in the gas mixtures and increased bias voltage. The $sp^3/sp^2$ bonding ratio of carbon in thin film and the hardness increased with increasing flow rate of hydrogen in the gas mixtures and increasing bias voltage.

RF-PECVD 방법을 이용하여 DLC(diamond-like carbon)박막을 메탄-수소 가스 혼합비 및 바이어스 전압에 따라 실리콘 웨이퍼 위에 증착하였다. DLC 박막의 결합구조적 특성 및 기계적 성질은 FT-IR, Raman, 그리고 nano-indenter를 이용하여 평가하였다. 혼합가스내 메탄의 유량과 바이어스 전압이 증가함에 따라 증착속도가 증가하였다. 박막내 탄소의 $sp^3/sp^2$ 결합비와 경도는 반응가스내 수소의 유량 및 바이어스 전압이 증가함에 따라 증가하였다.

Keywords

References

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