한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제17권2호
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  • Pages.178-183
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  • 2004
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Sm이 첨가된 PZT 박막의 강유전 특성

Ferroelectirc Properties of Sm-doped PZT Thin films

  • 손영훈 (중앙대학교 전자전기공학과) ;
  • 김경태 (중앙대학교 전자전기공학과) ;
  • 김창일 (중앙대학교 전자전기공학과) ;
  • 이병기 (인천기능대학 전기계측제어과) ;
  • 장의구 (중앙대학교 전자전기공학과)
  • 발행 : 2004.02.01
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초록

PBT thin film was known to be a representative for the FeRAM devices because of its good ferroelectric proporties and the ease in fabricating the thin film. However, there have been several problems such as polarization fatigue and leakage current in memory devices with a PZT thin film. In this study, Sm-dolled PZT thin films were fabricated by the so1-gel method, and their ferroelectric and dielectric proportrics were compared as a function of Sm content. We investigated the effect of the Sm dopant on structural and electrical properties of PZT film. Sm-doped PZT thin films on the Pt/Ti/SiO$_2$/Si substrates have been prepared by a sol-gel method. The remanent polarization and coercive field decreased with increasing the concentration of Sm. The dielectric constant and dielectric loss decreased with Increasing Sm content. Sm-doped PZT thin films showed improved fatigue characteristics compared to the undoped PZT thin film.

키워드

참고문헌

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