한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제17권1호
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  • Pages.21-26
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  • 2004
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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급속 건식 열산화 방법에 의한 초박막 SiO2의 성장과 특성

Growth and Properties of Ultra-thin SiO2 Films by Rapid Thermal Dry Oxidation Technique

  • 정상현 (청주대학교 정보통신공학부) ;
  • 김광호 (청주대학교 정보통신공학부) ;
  • 김용성 (청주대학교 정보통신공학부) ;
  • 이수홍 (세종대학교 전자정보통신공학부)
  • 발행 : 2004.01.01
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초록

Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva ＆ Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.

키워드

참고문헌

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