ETRI Journal

  • 제26권6호
  • /
  • Pages.669-672
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  • 2004
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
권호 표지

Single-Electron Pass-Transistor Logic with Multiple Tunnel Junctions and Its Hybrid Circuit with MOSFETs

  • 투고 : 2004.08.04
  • 발행 : 2004.12.31
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초록

To improve the operation error caused by the thermal fluctuation of electrons, we propose a novel single-electron pass-transistor logic circuit employing a multiple-tunnel junction (MTJ) scheme and modulate a parameters of an MTJ single-electron tunneling device (SETD) such as the number of tunnel junctions, tunnel resistance, and voltage gain. The operation of a 3-MTJ inverter circuit is simulated at 15 K with parameters $C_g=C_T=C_{clk}=1\;aF,\;R_T=5\;M{\Omega},\;V_{clk}=40\;mV$, and $V_{in}=20\;mV$. Using the SETD/MOSFET hybrid circuit, the charge state output of the proposed MTJ-SETD logic is successfully translated to the voltage state logic.

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참고문헌

  1. Mesoscopic Phenomena in Solid Averin, D.;Licharev, K.K.
  2. Int’l Electron Device Meeting Single-Electron Pass-Transistor Logic: Operation of Its Elemental Circuit Ono, Y.;Takahashi, Y.
  3. Appl. Phys. Lett. v.62 Bistable Saturation in Coupled Quantum Dots for Quantum Cellular Automata Lent, C.S.;Tougaw, P.D.;Porod, W.
  4. Jpn. J. Appl. Phys. v.38 A New Design Scheme for Logic Circuits with Single Electron Transistors Uchida, K.;Matsuzawa, K.;Toriumi, A.
  5. IEEE Trans. Elec. v.44 no.7 Single-Electron Logic Device Based on the Binary Decision Diagram Asahi, N.;Akazawa, M.;Amemiya, Y.
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  7. Appl. Phys. Lett. v.72 Multiple-Junction Single-Electron Transistors for Digital Applications Chen, R.H.;Likharev, K.K.
  8. IEEE Trans. Nanotech. v.3 A Novel SET/MOSFET Hybrid Static Memory Cell Design Lee, B.H.;Jeong, Y.H.