Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Preparation of Anatase TiO2 Thin Films with (OiPr)2Ti(CH3COCHCONEt2)2 Precursor by MOCVD

  • Bae, Byoung-Jae (National Research Laboratory, Department of Chemistry and School of Molecular Science (BK21), Korea Advanced Institute of Science and Technology) ;
  • Lee, Kwang-Yeol (Department of Chemistry, Korea University) ;
  • Seo, Won-Seok (National Research Laboratory, Department of Chemistry and School of Molecular Science (BK21), Korea Advanced Institute of Science and Technology) ;
  • Miah, Md. Arzu (National Research Laboratory, Department of Chemistry and School of Molecular Science (BK21), Korea Advanced Institute of Science and Technology) ;
  • Kim, Keun-Chong (Department of Management Information System, College of Business Management, Hong-Ik University) ;
  • Park, Joon T. (National Research Laboratory, Department of Chemistry and School of Molecular Science (BK21), Korea Advanced Institute of Science and Technology)
  • Published : 2004.11.20
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Abstract

The reaction of titanium tetraisopropoxide with 2 equiv of N,N-diethyl acetoacetamide affords Ti($O^iPr)_2(CH_3COCHCONEt_2)_2$ (1) as colorless crystals in 80% yield. Compound 1 is characterized by spectroscopic (Mass and $^1H/^{13}C$ NMR) and microanalytical data. Molecular structure of 1 has been determined by a single crystal X-ray diffraction study, which reveals that it is a monomeric, cis-diisopropoxide and contains a six coordinate Ti(IV) atom with a cis($CONEt_2$), trans($COCH_3$) configuration (1a) in a distorted octahedral environment. Variable-temperature $^1H$ NMR spectra of 1 indicate that it exists as an equilibrium mixture of cis, trans (1a) and cis, cis (1b) isomers in a 0.57 : 0.43 ratio at -20$^{\circ}C$ in toluene-$d_8$ solution. Thermal properties of 1 as a MOCVD precursor for titanium dioxide films have been evaluated by thermal gravimetric analysis and vapor pressure measurement. Thin films of pure anatase titanium dioxide (after annealing above 500$^{\circ}C$ under oxygen) have been grown on Si(100) with precursor 1 in the substrate temperature range of 350- 500$^{\circ}$ using a bubbler-based MOCVD method.

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References

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