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Fabrication and Characteristics of Tantalum Nitride Thin-Film Strain Gauges

질화탄탈 박막형 스트레인 게이지의 제작과 특성

  • Chung, Gwiy-Sang (Dept. of Mechatronics Eng., Dongseo University) ;
  • Woo, Hyung-Soon (Dept. of Mechatronics Eng., Dongseo University) ;
  • Kim, Sun-Chul (Dept. of Electronic Information, Kyungnam Colege of Information Technology) ;
  • Hong, Dae-Sun (Dept. of Mechanical Design and Manufacturing, Changwon National University)
  • 정귀상 (동서대학교 메카트로닉스공학과) ;
  • 우형순 (동서대학교 메카트로닉스공학과) ;
  • 김순철 (경남정보대학 전자정보계열) ;
  • 홍대선 (창원대학교 기계공학과)
  • Published : 2004.07.31

Abstract

This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-$(4{\sim}16%)N_{2}$) for high-temperature applications. These films were annealed in $2{\times}10^{-6}$ Torr vacuum furnace at the range of $500{\sim}1000^{\circ}C$. Optimum deposition atmosphere and annealing temperature were determined at $900^{\circ}C$ for 1 hr. in 8% $N_{2}$ gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of $768.93{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance (TCR) of -84 ppm/$^{\circ}C$ and a good longitudinal gauge factor (GF) of 4.12.

Keywords

References

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