Corrosion Science and Technology

The Corrosion Science Society of Korea (한국부식방식학회)
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Dry Etching of Ru Electrodes using O2/Cl2 Inductively Coupled Plasmas

  • Kim, Hyoun Woo (School of Materials Science and Engineering, Inha University)
  • Published : 2003.10.01
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Abstract

The characteristics of Ru etching using $O_2/Cl_2$ plasmas were investigated by employing inductively coupled plasma (ICP) etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with the gas flow ratio, bias power, total gas flow rate, and source power were scrutinized. A high etching slope (${\sim}86^{\circ}$) and a smooth surface after etching was attained using $O_2/Cl_2$ inductively coupled plasma.

Keywords

Acknowledgement

Supported by : Samsung Electronics

References

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