A Study on the Plasma Etching of Ru Electrodes using $O_2/Cl_2$ Helicon Discharges

  • 발행 : 2003.08.01

초록

The Ru etching using $O_2/C_{12}$ plasmas has been studied by employing the helicon etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with varied process variables were investigated. The Ru etching slope at the optimized etching condition was measured to be $84^{\circ}$. We reveal that the Ru etching using $O_2/C_{12}$ plasma generates the $RuO_2$ thin film. Possible mechanism of Ru etching is discussed.

키워드

참고문헌

  1. H. W. Kim, B. S. Ju, B. Y. Nam, W. J. Yoo, C. J. Kang, T. H. Ahn, J. T. Moon, and M. Y. Lee, J. Vac. Sci. Technol. A 17, 2151 (1999)
  2. T. Aoyama, S. Yamazaki, and K. lmai, J. Electrochem. Soc. 145, 2961 (1998)
  3. W. J. Yoo, J. H. Hahm, H. W. Kim, C. O. Jung, Y. B. Koh, and M. Y. Lee, Jpn. J. Appl. Phys. 35, 2501 (1995)
  4. K. Nishikama, Y. Kusumi, T. Oomori, M. Hanazaki, and K. Namba, Jpn. J. Appl. Phys. 32, 6102 (1993)
  5. S. Yokoyama, Y. Ito, K. Ishihara, K. Hamada, S. Ohnishi, J. Kudo, and K. Sukiyama, Jpn. J. Appl. Phys. 34, 767 (1995)
  6. H. W. Kim, B. S. Ju, C. J. Kang, and J. T. Moon, Microelectronic Engineering 65, 185 (2003)
  7. S. Saito and K. Kuramasu, Jpn. J. Appl. Phys. 31, 135 (1992)
  8. W. Pan and S. B. Desu, J. Vac. Sci. Technol. B 12, 3208 (1994)