반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)
- 제2권4호
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- Pages.9-12
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- 2003
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- 1738-2270(pISSN)
플라즈마 챔버의 특성 분석 및 최적 설계를 위한 가상의 시뮬레이션 환경 개발
Development of Virtual Integrated Prototyping Simulation Environment for Plasma Chamber Analysis and Design (VIP-SEPCAD)
초록
This paper describes a newly developed simulation environment for analysis and design of a plasma processing chamber based on first principles including complicated physical and chemical interactions of plasma, fluid dynamics of neutrals, and transport phenomena of particles. Capabilities of our simulator, named VIP-SEPCAD (Virtual Integrated Prototyping Simulation Environment for Plasma Chamber Analysis and Design), are demonstrated through a two dimensional simulation of an oxygen plasma chamber. VIP-SEPCAD can provide plasma properties such as spatiotemporal profiles of plasma density and potential, electron temperature, ion flux and energy, etc. By coupling neutral and particle transport models with a three moment plasma model, VIP-SEPCAD can also predict spatiotemporal profiles of chemically reactive species and particles exist in plasma.