반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)
- 제2권3호
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- Pages.7-11
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- 2003
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- 1738-2270(pISSN)
Multi-pole Inductively Coupled Plasma(MICP)를 이용한 Via Contact 및 Deep Contact Etch 특성 연구
Via Contact and Deep Contact Hole Etch Process Using MICP Etching System
초록
In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.