Journal of the Korean Society of Safety (한국안전학회지)

The Korean Society of Safety (한국안전학회)
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Annealing Effect on the Electrical Characteristics for Oxide Semiconductor ITO_{(n)}/Si_{(p)}$ Solar Cell

산화물 반도체 ITO_{(n)}/Si_{(p)}$ 태양전지의 전기적 특성에 미치는 열처리 효과

  • 김용운 (세경대학 전기전자계열)
  • Published : 2003.09.01
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Abstract

ITO_{(n)}/Si_{(p)}$ solar cell is fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The maximum output of fabricated solar cell is obtained when the composition of the thin film is consisted of indium oxide 91[mole %] and tin oxide 9(mole %). The solar cell electrical charateristics can be improved by annealing but are deteriorated at temperature above 600[$^{\circ}C$] for longer than 15[min].

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References

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