The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

A Study on the Characteristics of the High Concentration Ozone Generator for the Semiconductor Wafer Cleaning with the Ozone Dissolved De-ionized Water

반도체 웨이퍼의 오존 수(水) 세정을 위한 고농도 오존발생장치 특성 연구

  • 손영수 (한국기계연구원 첨단산업기술연구부) ;
  • 함상용 (한국기계연구원 첨단산업기술연구부) ;
  • 문세호 (세왕 CET㈜)
  • Published : 2003.12.01
Download PDF
⟨ Previous Next ⟩

Abstract

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

Keywords

References

  1. W. Kern, Handbook of Semiconductor Wafer Clean ing Technology, Noyes Publications, Westwood, NJ, 1993, pp.383-391
  2. J. K. Tong, et al., in Cleaning Technology in Semiconductor Device Manufacturing, J.Ruzyllo and R.E. Novak, Editors, PV 92-12, p.18, The Electrochemical Society Proceedings Series, Pennington, NJ (1992)
  3. J. Wei and S. Verhaverbeke, in Cleaning Technology in Semiconductor Device Manufacturing V, The Electrochemical Society, Inc., Pennington, NJ, 1998, pp.496-504
  4. S.De Gendt, J. Wauters adn M. Heyns, 'A novel Resist and Post-Etch Residue Removal Process Using Ozonated Chemistry', Solid State Technology, December, 1998, pp.57-60
  5. S, Nelson, 'Ozonated Water for Wafer Cleaning and Photoresist Removal', Solid State Technology, July, 1999, pp.107-112
  6. J. Cheng, D. Nemeth, 'The Study of Temperature Effect in Photoresist Stripping with DIO3 Process', Technical Report, Akrion, Allentown, PA, April 12, 1999
  7. Rice Aharan Netzer, 'Handbook of ozone technology and applications volume II', An Ann Arbor Science Book, 1984
  8. Bruno Langlais David A,'Ozone in water treatment; application and engineering', American Water Works Association Research Foundation, 1991
  9. Moo bean Chang, 'Experimental Study on Ozone Synthesis via Dielectric Barrier Discharge', Ozone Science and Engineering, Vol. 19, pp.241-254, 1997 https://doi.org/10.1080/01919519708547304
  10. 송현직, 이광식, '다중방전형 오존발생기의 시작 및 특성(I)', 대한전기학회논문지, Vol.48C, No.7, pp.533-541, 1997
  11. 조국희, 이형호, '동축형 전극길이 변화시의 연면 무성방전에 의한 오존발생특성', 대한전기학회논문지 Vol. 48C, No.12, pp.791-797, 1999
  12. 이형호, 조국희, '유전체 장벽 방전내에서 오존발생특성', 대한전기학회논문지 Vol.49C, No.12, pp.673-678, 2000