Abstract
In this study, the MgO thin-film passivation layer was adopted to protect passive matrix organic light emitting diode(PMOLED) with the cathode separator from moisture and oxygen. Using the substrate rotate and tilt technique during the deposition, the organic and cathode layers were perfectly covered with MgO. And then, we analyzed the difference of the current-voltage and luminescence characteristics between passivated OLED of the MgO and non-passivated OLED. It was found that the number of dark spot generated from the degradated pixel was decreased owing to the Mgo thin-film passivation layer using the tilt & rotate technique. And the half-life time passivated OLED was improved two times more. Thus, the MgO could be vaccum-deposited under the low temperature and had a merit that the organic layer was not much affected. We can consider that MgO thin film passivation method can be adopted to protect the OLED from moisture and oxygen and can offer the enhancement of lifetime.