Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Etching Characteristics of Gold Thin Films using Inductively Coupled CF4/CI2/Ar Plasma

CF4/CI2/Ar유도 결합 플라즈마에 의한 gold 박막의 식각특성

  • 김창일 (중앙대학교 전기전자공학부) ;
  • 장윤성 (중앙대학교 전지전자공학부) ;
  • 김동표 (중앙대학교 전지전자공학부) ;
  • 장의구 (중앙대학교 전지전자공학부)
  • Published : 2003.07.01
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Abstract

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

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References

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