Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Computer simulation of electric field distribution in FALC process

FALC 공정에서의 전계 분포 전산모사

  • 정찬엽 (한양대학교 세라믹공학과, CPRC) ;
  • 최덕균 (한양대학교 세라믹공학과, CPRC) ;
  • 정용재 (한양대학교 세라믹공학과, CPRC)
  • Published : 2003.04.01
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Abstract

The crystallization behavior of amorphous silicon is affected by direction and intensity of electric field in FALC（Field-Aided Lateral Crystallization). Electric field was calculated in a simplified model using conductivity data of Mo, a-Si, $SiO_2$and boundary conditions for electric potential at the electrodes. The magnitude of electric field intensity in each corner of cathode was much larger than that in the center of patterns, and the electric field direction was 50~60 degree outside to cathode. And electric field intensity at a relatively small pattern was larger than that of a large pattern.

FALC(Field-Aided Lateral Crystallization) 공정에서 요구되는 a-Si의 결정화는 인가한 전계(electric field)의 세기와 방향에 의존한다. 본 연구에서는 유한요소법을 적용하여 실제 패턴을 간단하게 모델링한 형상에 각 물질의 전도도를 대입하고, 전안을 가해 그 결과로 발생하는 전계의 분포를 계산하였다. 전계는 (-)극 주위에서 전극의 양쪽 모서리 부근이 가운데 부분보다 더 높게 나타났고 그 방향은 전극과 50~$60^{\circ}$를 이루는 대각선 방향이었다. 또한 예상한대로 크기가 작은 패턴이 큰 패턴보다 더 큰 전계 값을 가지는 것으로 나타났다.

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References

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