대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

펄스레이저 증착법의 레이저 파장변환에 의한 실리콘 나노결정의 발광 특성 연구

Study on the Luminescence of Si Nanocrystallites on Si Substrate fabricated by Changing the Wavelength of Pulsed Laser Deposition

  • 김종훈 (연세대학 전기전자공학과) ;
  • 전경아 (연세대학 전기전자공학과) ;
  • 최진백 (연세대학 전기전자공학과) ;
  • 이상렬 (연세대학 전기전자공학과)
  • 발행 : 2003.04.01
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⟨ 이전 논문 다음 논문 ⟩

초록

Silicon nanocrystalline thin films on p-type (100) silicon substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355, 532, and 1064 nm. The base vacuum in the chamber was down to $10^-6$ Torr and the laser energy densities were 1.0~3.0 J/$\textrm{cm}^2$ After deposition, silicon nanocrystalline thin films have been annealed at nitrogen gas. Strong Blue and green luminescence from silicon nanocrystalline thin films have been observed at room temperature by photoluminescence and its peak energies shift to green when the wavelength is increased from 355 to 1064 nm.

키워드

참고문헌

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