참고문헌
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Appl. Phys. Lett.
v.77
no.14
Boron penetration in
$p^+$ polycrystalline-Si/Al₂O₃/Si metal oxide semiconductor system D. G. Park;H. J. Cho;I. S. Yeo;J. S. Roh;J. M. Hwang https://doi.org/10.1063/1.1315346 - 전기전자재료학회논문지 v.8 no.4 PICTS 방법에 의한 Boron 이온을 주입시킨 반절연성 GaAs 의 깊은 준위에 관한 연구 김인수;이철욱;배인호;최현태;손정식;김영일 https://doi.org/10.1063/1.1485128
- 전기전자재료학회논문지 v.11 no.5 Retrograde Well 형성을 위한 고에너지 이온주입에 대한 연구 윤상현;곽계달
- 윤상현, 곽계달, "Retrograde Well 형성을 위한 고에너지 이온주입에 대한 연구", 전기전자재료학회논문지, 11권, 5호, p.358, 1998.
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- J. Electrochem. Soc. v.147 no.9 Dose, Energy, and Ion Species Dependence of the Effective Plus Factor for Transient Enhanced Diffusion G. Hobler;L. Pelaz;C. S. Rafferty https://doi.org/10.1149/1.1393926
- Appl. Phys. Lett. v.60 no.15 Localized fabrication of Si nanostructures by focused ion beam implantation A. J. Steckl;H. C. Mogul;S. Mogren https://doi.org/10.1063/1.107179
- Appl. Phys. Lett. v.75 no.11 1.55 ㎛ single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation H. Konig;S. Rennon;J. P. Reithmaier;A. Forchel;J. L. Gentner;L. Goldstein https://doi.org/10.1063/1.124732
- Appl. Phys. Lett. v.53 no.18 Formation of ultrashallow p'-n junctions by low-energy boron imoplantation using a modified ion implanter S. N. Hong;G. A. Ruggles;J.J. Paulos;J. J. Wortman;M. C. Ozturk https://doi.org/10.1063/1.100470
- 전기전자재료학회논문지 v.10 no.9 실리콘에 MeV로 이온주입된 인의 결함분포와 profile 에 관한 연구 정원채 https://doi.org/10.1063/1.100470
- Appl. Phys. Lett. v.80 no.23 Channeling of low energy heavy ions: Er in Si <111> S. M. Hogg;B. Pipeleers;A. Vantomme;M. Swart https://doi.org/10.1063/1.1485128