대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

직접회로용 BJT의 베이스 Gummel Number 해석 방법에 관한 연구

A Study on the Method of the Analysis of the Base Gummel Number of the BJT for Integrated Circuits

  • 이은구 (인하대학교 전자공학과) ;
  • 김철성 (인하대학교 전자공학과)
  • 발행 : 2003.02.01
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초록

The method of the analysis of the base Gummel number of the BJT(Bipolar Junction Transistor) for integrated circuits based upon the semiconductor physics is proposed and the method of calculating the doping profile of the base region using process conditions is presented. The transistor saturation current obtained from the proposed method of NPN BJT using 20V and 30V process shows an averaged relative error of 6.7% compared with the measured data and the transistor saturation current of PNP BJT shows an averaged relative error of 9.2% compared with the measured data

키워드

참고문헌

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