E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제16권1호
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- Pages.61.2-61
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- 2003
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Improvement in the crystallinity of ZnO thin films by introduction of a buffer layer
- Nakamura, Toshiyuki (The Graduate School of Engineering, Gifu University) ;
- Yamada, Yasusei (National Institute of Advanced Industrial Science and Technology (AIST)) ;
- Kusumori, Takeshi (National Institute of Advanced Industrial Science and Technology (AIST)) ;
- Minoura, Hideki (The Graduate School of Engineering, Gifu University) ;
- Muto, Hachizo (The Graduate School of Engineering, Gifu University, National Institute of Advanced Industrial Science and Technology (AIST))
- 발행 : 2003.01.01