대한전기학회논문지:시스템및제어부문D (The Transactions of the Korean Institute of Electrical Engineers D)

대한전기학회 (The Korean Institute of Electrical Engineers)
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역전파 신경망을 이용한 고전력 반도체 소자 모델링

Modeling High Power Semiconductor Device Using Backpropagation Neural Network

  • 발행 : 2003.05.01
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초록

Using a backpropagation neural network (BPNN), a high power semiconductor device was empirically modeled. The device modeled is a n-LDMOSFET and its electrical characteristics were measured with a HP4156A and a Tektronix curve tracer 370A. The drain-source current $(I_{DS})$ was measured over the drain-source voltage $(V_{DS})$ ranging between 1 V to 200 V at each gate-source voltage $(V_{GS}).$ For each $V_{GS},$ the BPNN was trained with 100 training data, and the trained model was tested with another 100 test data not pertaining to the training data. The prediction accuracy of each $V_{GS}$ model was optimized as a function of training factors, including training tolerance, number of hidden neurons, initial weight distribution, and two gradients of activation functions. Predictions from optimized models were highly consistent with actual measurements.

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참고문헌

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