Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Memory Effects of a Carbon Nanotube Nanodevice

  • Lee Chi-Heon (Department of Material Science and Engineering, KAIST) ;
  • Kim Ho-Gi (Department of Material Science and Engineering, KAIST)
  • Published : 2003.08.01
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Abstract

To discover electrical properties of individual single wall nanotube(SWNT), a number of SWNT-based tubeFETs have been fabricated. The device consists of a single semiconducting SWNT on an insulating substrate, contacted at each end by metal electrodes. It presents high transconductances, and charge storage phenomenon, which is the operations of injecting electrons from the nanotube channel of a tubeFET into charge traps on the surface of the $SiO_2$ gate dielectric, thus shifting the threshold voltage. This phenomenon can be repeated many times, and maintained for the hundreds of seconds at room temperature. We will report this phenomenon as the memory effects of the SWNT, and attempt to use this property for the memory device.

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References

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