참고문헌
-
F. Diette, D. Langrez, J. L. Cordon, E. Delos, D. Theon, and G. Salmer '1510 mS/mm 0.1
${\mu}m$ gate length pseudomorphic HEMTs with intrinsic current gain cutoff frequency of 220 GHz,' Electron Lett. vol. 32,no. 9, pp. 848-850, 1996 https://doi.org/10.1049/el:19960516 - K. Lee, M. Shur, T. J. Drummond, and H. Morkoc, 'Parasitic MESFET in (AlGaAs/AlGa) modulation doped FETs and MODFET characterization,' IEEE Trans. Electron Devices, vol. ED.-31, pp. 29-35, 1984 https://doi.org/10.1109/T-ED.1984.21470
- K. Hess, 'Real space transfer: Generalized approach to transport in confined geometries,' Solid-State Electronics, vol. 31, pp. 329-324, 1988 https://doi.org/10.1016/0038-1101(88)90286-9
- K. Park and K. D. Kwack, 'A model for the current-voltage characteristics of MODFETs,' IEEE Trans. Electron Devices, vol. ED-33, pp. 673-676, 1986 https://doi.org/10.1109/T-ED.1986.22550
- N. I. Nathan, 'Persistent photoconductivity in AlGaAs/GaAs modulation-doped layers and field effect transistors,'Solid-State Electronics, vol. 29, pp. 167-172, 1986 https://doi.org/10.1016/0038-1101(86)90035-3
- R. Fisher et al., 'On the collapse of drain I-V characteristics in modulation-doped FETs, at low temperatures,' IEEE Trans. Electron Devices, vol. ED-31, pp.1028-1032, 1984 https://doi.org/10.1109/T-ED.1984.21655
- M. Abdel Aziz, M. EL-Sayed, and M. El-Banna, 'An analytical model for extrinsic small signal parameters in HEMTs,' Solid-State Electronics, vol. 43, pp. 891-900,1999 https://doi.org/10.1016/S0038-1101(98)00335-9
- B. Vinter, 'Subbands and charge control in two dimensional electron gas field effect transistor,' Appl. Phys.Lett., vol-44, pp. 840-848, 1984 https://doi.org/10.1063/1.94734
- Kreyszig, 'Advanced engineering mathematics,' JohnWiley & Sons Inc., 1993
- D. Delagebeauduef and N. Linh, 'Metal-(n) AlGaAs-GaAs Two dimensional electron GaAs FET,' IEEE Trans. Electron Devices, vol. ED-29, pp. 874-881, 1982 https://doi.org/10.1109/T-ED.1982.20813
- Y. Ando, and T. Itoh. 'Analysis of charge control inpseudomorphic two-dimentional electron gas field-effecttransistor,' IEEE Trans. Electron Devices, vol. ED-35,pp. 2295-2301, 1988 https://doi.org/10.1109/16.8805
- H. Rohdin and P. Roblen , 'A MODFET DC modelwith Improved pinchoff and saturation characteristics,' IEEE Trans. Electron Devices, vol. ED-32, pp. 664-671,1985 https://doi.org/10.1109/T-ED.1986.22549
-
M. Abdel Aziz and M. El-Banna, 'An analytical model for AlGaAs/GaAs HEMTs at large gate voltage,'
$40^{th}$ MIDWEST Symposium on Circuits and Systems,'UC Davis, USA, 1997 https://doi.org/10.1109/MWSCAS.1997.662322 - A. Ketterson, et al., 'Characterization of InGaAs pseudomorphic modulation doped field effect transistor,' IEEE Trans. Electron Devices, vol. Ed-33, pp. 561-571,1986 https://doi.org/10.1109/T-ED.1986.22533
- K. Lee et al., 'Current-voltage and Capacitance-voltage characteristics of modulation-doped field effect transistor,' IEEE Trans. Electron Devices, vol. ED-30, pp. 207-212, 1983 https://doi.org/10.1109/T-ED.1983.21101
- A. B. Grebene and S. K. Ghandhi, 'General theory for pinched operation of the junction-gate FET,' Solid-State Electronics, vol. 12, pp. 573-589, (1969) https://doi.org/10.1016/0038-1101(69)90112-9
-
D. H. Park and K. F. Brennan, 'Mote-Carlo Simulation of 0.35
$\mu$ m gate length GaAs and InGaAs HEMTs,' IEEE Trans. Electron Devices, vol. 37, pp. 618-628 (1990) https://doi.org/10.1109/16.47765