JSTS:Journal of Semiconductor Technology and Science

  • 제2권1호
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  • Pages.49-55
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  • 2002
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Monolithically Integrable RF MEMS Passives

  • Park, Eun-Chul (Department of Electrical Engineering and Computer Science(Division of Electrical Engineering) Korea Advanced Institute of Science and Technology) ;
  • Park, Yun-Seok (Department of Electrical Engineering and Computer Science(Division of Electrical Engineering) Korea Advanced Institute of Science and Technology) ;
  • Yoon, Jun-Bo (Department of Electrical Engineering and Computer Science(Division of Electrical Engineering) Korea Advanced Institute of Science and Technology) ;
  • Euisik Yoon (Department of Electrical Engineering and Computer Science(Division of Electrical Engineering) Korea Advanced Institute of Science and Technology)
  • 발행 : 2002.03.01
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초록

This paper presents high performance MEMS passives using fully CMOS compatible, monolithically integrable 3-D RF MEMS processes for RF and microwave applications. The 3-D RF MEMS technology has been developed and investigated as a viable technological option, which can break the limit of the conventional IC technology. We have demonstrated the versatility of the technology by fabricating various 3-D thick-metal microstructures for RF and microwave applications, such as spiral/solenoid inductors, transformers, and transmission lines, with a vertical dimension of up to $100{\;}\mu\textrm{m}$. To the best of our knowledge, we report that we are the first to construct a fully integrated VCO with MEMS inductors, which has achieved a low phase noise of -124 dBc/Hz at 300 kHz offset from a center frequency of 1 GHz.

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참고문헌

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