DOI QR코드

DOI QR Code

Cu/Ti/SiO2/Si 구조에서 Ti 층 두께가 Ti 반응에 미치는 효과

Effects of Ti Thickness on Ti Reactions in Cu/Ti/SiO2/Si System upon Annealing

  • 홍성진 (국민대학교 신소재공학부) ;
  • 이재갑 (국민대학교 신소재공학부)
  • Hong, Sung-Jin (School of Advanced Materials Engineering.Kookmin University) ;
  • Lee, Jae-Gab (School of Advanced Materials Engineering.Kookmin University)
  • 발행 : 2002.11.01

초록

The reactions of $Cu/Ti/SiO_2$ structures at temperatures ranging from 200 to $700^{\circ}C$ have been studied for various Ti thicknesses. The reaction products initially formed, at around $300^{\circ}C$, were a series of Cu-Ti intermetallics ($Cu_3$Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At $500^{\circ}C$, the $Cu_3$Ti was converted into Cu-rich intermetallics, $Cu_4$Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the $Ti-SiO_2$ reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The $SiO_2$ film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.

키워드

참고문헌

  1. N. Awaya and Y. Arita, J. Electron. Mater., 21, 959 (1992) https://doi.org/10.1007/BF02684203
  2. A. Jain, T. Kodas, R. Jairath and M.J. Hampden-Smith, J. Vac. Sci. Technol. B, 11, 2107 (1993) https://doi.org/10.1116/1.586550
  3. J. Lin and M. Chen Jpn. J. Appl. Phys. Part 1 , 38, 4863 (1999) https://doi.org/10.1143/JJAP.38.4863
  4. S.P. Murarka and S. Hymes, Crit. Rev. Solid State Mater. Sci., 20, 87 (1995) https://doi.org/10.1080/10408439508243732
  5. Y.J. Park, V.K. Andleigh and C.V. Thomson 1995 J. Appl. Phys., 85, 3546 https://doi.org/10.1063/1.369714
  6. C. Whitman, M.M. Moslehi, A. Paranjpe, L. Velo and T. Omstead 1999 J. Vac. Sci Technol. A, 17, (1893)
  7. C. Apblett, D. Muira, M. Sullivan and P. J. Ficalora, J. Appl. Phys., 71(10), 4925 (1992) https://doi.org/10.1063/1.350641
  8. S.W. Russell, J.W. Strane, J.W. Mayer and S.Q. Wang, J. Appl. Phys., 76(1), 257 (1994) https://doi.org/10.1063/1.357137
  9. Yuxiao Zeng, Linighui Chen and T.L. Alford, Applied Physics Letters, 76(1), 64 (2000) https://doi.org/10.1063/1.125657
  10. G.S. Chae, H.S. Soh, W.H. Lee and J.G. Lee, J. Appl. Phys., 90(1), 411 (2001) https://doi.org/10.1063/1.1375021
  11. N. Saunders, CALPHAD, 9(4), 297 (1985) https://doi.org/10.1016/0364-5916(85)90001-X
  12. Fried Sauert, Ernst Schultze-Rhonhof, Wang Shu Sheng, 'Thermochemical Data of Pure Substrates'