Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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High-temperature oxidation resistance of Ti-Si-N coating layers prepared by DC magnetron sputtering method

DC magnetron sputtering법으로 제조된 Ti-Si-N코팅막의 내산화성에 관한 연구

  • Choi, Jun-Bo (School of Materials Science and Engineering, Pusan National University) ;
  • Ryu, Jung-Min (School of Materials Science and Engineering, Pusan National University) ;
  • Cho, Gun (School of Materials Science and Engineering, Pusan National University) ;
  • Kim, Kwang-Ho (School of Materials Science and Engineering, Pusan National University) ;
  • Lee, Mi-Hye (Technology Appraisal Center, Korea Technology Credit Gurantee Fund)
  • 최준보 (부산대학교 재료공학부) ;
  • 류정민 (부산대학교 재료공학부) ;
  • 조건 (부산대학교 재료공학부) ;
  • 김광호 (부산대학교 재료공학부) ;
  • 이미혜 (기술신용보증기금 기술평가센터)
  • Published : 2002.12.01
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Abstract

Ti-Si-N coating layers were codeposited on silicon wafer substrates by a DC reactive magnetron sputtering technique using separate titanium and silicon targets in $N_2$/Ar gas mixtures. The oxidation behavior of Ti-Si-N coating layers containing 4.0 at.%, 10.0 at.%, and 27.3 at.% Si was investigated at temperatures ranging from 600 to $960^{\circ}C$. The coating layers containing 4.0 at.% Si became fast oxidized from $600^{\circ}C$ while the coating layers containing 10.0 at.% Si had oxidation resistance up to $800^{\circ}C$. It was concluded that an increase in Si content to a level of 10.0 at.% led to the formation of finer TiN grains and a uniformly distributed amorphous Si3N4 phase along grain boundaries, which acted as efficient diffusion barriers against oxidation. However, the coating layers containing 27.3 at.% Si showed relatively low oxidation resistance compared with those containing 10.0 at.% Si. This phenomenon would be explained by the existence of free Si which was not nitrified in the coating layers containing 27.3 at.% Si.

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References

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