Transactions on Electrical and Electronic Materials

  • 제3권4호
  • /
  • Pages.27-31
  • /
  • 2002
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Fabrication of Novel Thin Film Diode with Multi-step Anodic Oxidation and Post Heat-treatment

  • Hong, Sung-Jei (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Lee, Chan-Jae (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Moon, Dae-Gyu (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Kim, Won-Keun (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Han, Jeong-In (Information Display Research Center, Korea Electronics Technology Institute)
  • 발행 : 2002.12.01
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초록

Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.

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참고문헌

  1. C. J. Lee, D. G. Moon, M. G. Kwak, Y. H. Kim,and J. I. Han, 'Characteristics of top emission PLED by metal anodes', Proc. 2002 Summer Conf. KIEEME, p. 968, 2002
  2. S. J. Choi, I. K. Lee, S. K. Park, W. K. Kim, D. G.Moon, and J. I. Han, 'Electrical properties oforganic thin film transistor on plastic substratewith double insulation layer', Proc. 2002 SummerConf. KIEEME, p. 194, 2002
  3. T. Hirai, H. Morita, and M. Tasaka, 'Current-Voltage Charactehstics of Thin-film diodeelements and application of poole-frenkelequation', Jpn. J. Appl. Phys., Vol. 38, p. 6549,1999 https://doi.org/10.1143/JJAP.38.6549
  4. T. Nakamura, S. Kamagami, and H. Morita,'Effect of top electrode matehal on the I-Vcharacteristics in MIM elements', Asia Display95, p. 23,1995
  5. M G Pitt, N. A. J. M. van Aerle, F. Leenhouts, J.M. Havekes, H. F. van Rooijen, H. W. M. Schell,and F. C. van de, 'A reflective active matrix LCDusing a two mask thin-film diode process', SID'97 Digest paper, p. 473, 1997
  6. K. Sunohara and H. Morita, 'Display performance improvement of thin-film diode liquid-crystal display by a low-temperature anodizing method',Jpn. J. Appl. Phys., Vol. 30, No. 12B, p. 3729,1991 https://doi.org/10.1143/JJAP.30.3729
  7. S. J. Hong, C. J. Lee, S. K. Park, J. I. Han, W. K.Kim, M. G. Kwak, Y. H. Kim, M. J. Lee, and K.S. Chung, 'High performance MIM devices forplastic film AM-LCD', Asia Display/IDW 01, p.403,2001
  8. J. I. Han, W. K. Kim, S. J. Hong, S. K. Park, M. J.Lee, and K. S. Chung, 'High performance 2'MIM-LCD with perfect symmetry anduniformity', IMID `01 Digest paper, p. 420, 2001
  9. L. Vaquez, I. Montero, and J. M. Albella, 'AFM study of the dielectric breakdown in Ta_2O_5 films',Chem. Mater., Vol. 7, P. 1680, 1995 https://doi.org/10.1021/cm00057a016
  10. Hartman, 'Two-terminal devices technologies for AMLCDs', SID `95 Digest paper, P. 7, 1995
  11. C. J. Lee, S. J. Hong, J. I. Han, and W. K. Kim,'Fabrication of flexible thin film diode device forplastic film LCD', Proc. 2002 Summer Conf.KIEEME, p. 218, 2002