대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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초절전형 Schottky barrier rectifier의 제조 및 그 특성

Fabrication and Characteristics of ultra power-saving Schottky barrier rectifier

  • 김준식 (경북대학교 전자전기컴퓨터학부) ;
  • 최영호 (경북대학교 전자전기컴퓨터학부) ;
  • 박근영 (경북대학교 전자전기컴퓨터학부) ;
  • 최시영 (경북대학교 전자전기컴퓨터학부)
  • Kim, Jun-Sik (Dept.of Electronics Electrical Computer, Kyungpook National University) ;
  • Choe, Yeong-Ho (Dept.of Electronics Electrical Computer, Kyungpook National University) ;
  • Park, Geun-Yeong (Dept.of Electronics Electrical Computer, Kyungpook National University) ;
  • Choe, Si-Yeong (Dept.of Electronics Electrical Computer, Kyungpook National University)
  • 발행 : 2002.04.01
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초록

일함수가 낮은 바나듐과 몰리브덴을 장벽금속으로 사용하여 초절전형 SBR을 제조하였다. 일함수가 낮은 장벽금속을 사용함으로서 나타나는 역방향 누설전류를 감소시키기 위해 n-Si층에 아르곤 이온을 1×10/sup 14/ ion/㎠, 40 keV로 주입하였다. 제조된 소자의 전기적 특성은 60 A/㎠의 동일한 전류밀도에서 Mo-SBR의 V/sub F/는 0.39 V이고 V-SBR은 0.25 V로서 매우 낮은 V/sub F/를 나타내었다. 이에 따라 아르곤 이온주입에 의해 제조된 Y-SBR의 역방향 누설전류는 일반적인 V-SBR과 비교하여 20㎂ 이상 감소됨을 확인할 수 있었다. 또한, 아르곤 이온주입으로 인한 소자의 특성저하는 나타나지 않았다.

Ultra-power-saving SBR has been fabricated by using vanadium and molybdenum with low work function. Because reverse leakage current is increased in inverse proportion to work function, we implanted argon ion on the n-Si layer for decreasing leakage current. The dose and acceleration energy of the argon implantation in the silicon was 1$\times$10$^{14}$ ion/$\textrm{cm}^2$, 40 keV, respectively. The forward voltages drop of fabricated V-SBR and Mo-SBR were 0.25 V and 0.39 V at the same forward current density of 60 A/$\textrm{cm}^2$. As a result, it was found that the reverse leakage current of the fabricated V-SBR was reduced over 20$mutextrm{A}$ by the argon implantation in comparison with the no implanted V-SBR. Also, owing to argon implantation, the inferiority of characteristic of the SBR was not detected.

키워드

참고문헌

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