대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
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MOCVD RuOx 박막의 미세구조 특성평가와 열처리 가스환경 영향

Microstructural Characterization of MOCVD RuOx Thin Films and Effects of Annealing Gas Ambient

  • 김경원 (충북대학교 전기전자 및 컴퓨터공학부) ;
  • 김남수 (충북대학교 전기전자 및 컴퓨터공학부) ;
  • 최일상 (하이닉스반도체) ;
  • 김호정 (하이닉스반도체) ;
  • 박주철 (하이닉스반도체)
  • 발행 : 2002.09.01
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초록

RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.

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