대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

Ga$_2$O$_3$ 나노벨트의 성장기구

The Growth Mechanism of Ga$_2$O$_3$ Nanobelt

  • 발행 : 2002.09.01
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초록

Ga$_2$O$_3$ nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about 10~200nm width and 10~50nm thickness. The nanobelt, growing along the direction perpendicular to the (010) plane and enclosed by (101) and (101) facets, shows no defect and no dislocation.

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참고문헌

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