DOI QR코드

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Mesh-type PECVD를 이용한 DC-bias인가 및 수소가스 첨가에 따른 저수소화 비정질 실리콘 박막에 관한 연구

The Properties of Low Hydrogen Content α-Si Thin Film Using DC-bias Enhanced or Addition of H2Gas in Mesh-type PECVD System

  • 류세원 (홍익대학교 금속재료공학과) ;
  • 권도현 (홍익대학교 금속재료공학과) ;
  • 박성계 (홍익대학교 금속재료공학과) ;
  • 남승의 (홍익대학교 금속재료공학과) ;
  • 김형준 (홍익대학교 금속재료공학과)
  • 발행 : 2002.04.01

초록

In this study mesh-type PECVD system was suggested to minimize the hydrogen concentration. The main structural difference between the triode system and a conventional system is that, a third electrode, a mesh, is inserted between the powered and the ground electrode. We investigated several conditions to compare with conventional PECVD. The main effect of mesh was to minimize the substrate damage by ion bombardment and to enhance the surface reaction to induce hydrogen desorption. It was also found that hydrogen concentration decreased but deposition rate increased as increasing applied bias. Applied DC-bia s enhanced sputtering process. Intense ion bombardment causes the weakly bonded hydrogen or hydrogen-containing species to leave the growing film and increased adatom mobility. Furthermore, addition of hydrogen gas enhance the surface diffusion of adatom.

키워드

참고문헌

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