참고문헌
- Proc. 9th ISIF A simple unfied analytical model for ferroelectric thin film capacitor and its appliations for nonvolatile memory operation M.Azuma;D.Y.Chen;L.D.McMillan;C.A.Paz
- J. Appl. Phys. v.32 no.9B BaTiO₃partical size dependence of ferroelectricity in BaTiO₃/ polymer composite T.Yamamoto;K.Urabe;H.Banno https://doi.org/10.1143/JJAP.32.4272
- Ferroelectrics v.32 no.9B Dielectric constant and leakage current of epitaxially grown and polycrystalline SrTiO₃thin films K. Abe;S.Komatsu
- Mat. Res. Soc. Proc. v.361 Correlation of Ba1-x SrTiO₃materials and dielectric properties Robert Tsu;H.Y.Liu;W.Y.Hsu;Scott Summerfelt;K.Aoki
- Mat. Res. Soc. Proc. v.361 Microstructure evolution of epitaxial (Ba, Sr)TiO₃/(001) MgO thin films V.A.Alyoshin;E.V.Sviridov;Vi.M.Mukhortov;I.N.Zakharchenko;V.P.Dudkevich
- Mat. Res. Soc. Proc. v.361 Investigation of the characteristics of ferroelectric thin films deposited by pulsed laser ablation S.Sengupta;D.P.Vijay;S.B.Desu
- J. Appl. Phys. v.32 no.9B Preparation and Properties of Ferroelectric BaTiO₃Thin Films by Sol-Gel Process T.Hayashi;N.Ohji;K.Hirohara;T.Hukunaga;H.Maiwa https://doi.org/10.1143/JJAP.32.4092
- 전기전자재료학회논문지 v.11 no.9 Sol-Gel 법으로 제조한 (Ba, Sr)TiO₃박막의 구조 및 유전특성 이성갑;이영희;정장호;이문기
- 전기전자재료학회논문지 v.13 no.7 Sol-Gel 법으로 제조한 (Ba, Sr)TiO₃박막의 전기적특성 류기원;이영희;정장호;이문기
- 전기전자재료학회논문지 v.9 no.4 ULSI DRAM의 Capacitor 절연막용 BST 박막의 제작과 특성 류정선;강성준;윤영섭
- J. Chem. Soc. 有機物配位子を用ぃたゾルゲルによるTiO₂薄膜の作製と性質 西出利一;水上富士夫
- フラクタルって何だろう 高安秀樹;高安美佐子
- 요업재료의 과학과 기술 v.9 no.6 고유전율과 박막재료의 ULSI-DRAM에서의 응용현황과 전망 황철성
- IEICE Trans. Elec. v.E77-C no.3 (Ba0.75, Sr0.25)TiO₃Films for 256Mbit DRAM T.Horikwa;N.Mikami;H.Ito;Y.Ohno;T.Makita;K.Sato
- Mat. Res. Soc. Symp. Proc. v.361 Growth of Ferroelectric PLT Thin Films on Various Single Crystal Substrates Y.M.Kang;J.K.KU;S.BAIK