대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

트랜치 구조를 갖는 단락 애노드 SOI LIGBT

Trench Shorted Anode LIGBT on 501 Substrates

  • 발행 : 2002.05.01
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초록

A trench shorted anode LIGBT (TSA-LIGBT) which decreases the device area and the forward voltage drop has been proposed and verified by 2D device simulations. The trench located in the shorted anode would form the shorted anode. The simulation results show that TSA-LIGBT decrease the device area by about 20% and the forward voltage drop by over 75% compared with the conventional ones. Also the troublesome negative differential resistance (NDR) regime has been eliminated successfully in the TSA-LIGBT.

키워드

참고문헌

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  2. M. R. Simpson, 'Analysis of negative differential resistance in the I_V characteristics of shorted-anode LIGBT', IEEE Trans. Electron Devices, vol. 38, no. 7, 1991
  3. Garter M. et al, 'Bistability and hysteresis in the characteristics of segmented-anode lateral IGBTs', IEEE Trans. Electron Devices, vol. 45, no. 7, 1998 https://doi.org/10.1109/16.701491
  4. B. H. Lee, J. H. Chun, M. K. Han and Y. I. Choi, 'A new gradual hole injection dual-gate LIGBT', IEEE Electron Device Letter, vol. 19, no. 12, 1998
  5. J. H. Chun, D. S. Byeon, M. K. Han and Y. I. Choi, 'A Fast-Switching SOI SA-LIGBT without NDR region', Proc. of 12th International Symposium On Power Semiconductor devices and ICs, 2000 https://doi.org/10.1109/ISPSD.2000.856793