Trench Shorted Anode LIGBT on 501 Substrates

트랜치 구조를 갖는 단락 애노드 SOI LIGBT

  • Published : 2002.05.01

Abstract

A trench shorted anode LIGBT (TSA-LIGBT) which decreases the device area and the forward voltage drop has been proposed and verified by 2D device simulations. The trench located in the shorted anode would form the shorted anode. The simulation results show that TSA-LIGBT decrease the device area by about 20% and the forward voltage drop by over 75% compared with the conventional ones. Also the troublesome negative differential resistance (NDR) regime has been eliminated successfully in the TSA-LIGBT.

Keywords

References

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