대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

STI-CMP 적용을 위한 이중 연마 패드의 최적화

Optimization of Double Polishing Pad for STI-CMP Applications

  • 박성우 (대불대학교 전기공학과 석사) ;
  • 서용진 (아남 반도체 FAB 사업부.) ;
  • 김상용 (대불대학교 전기공학과.)
  • 발행 : 2002.07.01
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초록

Chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD), inter-level dielectric (ILD) layers of multi-layer interconnections. In this paper, we studied the characteristics of polishing pad, which can apply shallow trench isolation (STI)-CMP process for global planarization of multi-level interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was detected less than 2 on JR111 pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and device yield.

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참고문헌

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