Transactions on Electrical and Electronic Materials

  • 제3권1호
  • /
  • Pages.1-3
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  • 2002
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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p-n Heterojunction Composed of n-ZnO/p-Zn-doped InP

  • Shim, Eun-Sub (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kang, Hong-Seong (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kang, Jeong-Seok (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Pang, Seong-Sik (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, Sang-Yeol (Department of Electrical and Electronic Engineering, Yonsei University)
  • 발행 : 2002.03.01
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초록

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

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참고문헌

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