The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effect of TiB$_2$on Properties of SiC Electroconductive Ceramic Composites

SiC 전도성 세라믹 복합체의 특성에 미치는 TiB$_2$의 영향

  • Published : 2002.04.01
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Abstract

The mechanical and electrical properties of the pressureless sintered SiC-TiB$_2$electroconductive ceramic composites were investigated as functions of the transition metal of TiB$_2$. The result of phase analysis for the SiC-TiB$_2$ composites by XRD revealed $\alpha$-SiC(6H), TiB$_2$, and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phases. The relative density showed the lowest 84.8% for the SiC-TiB$_2$composites added with 39vol.%TiB$_2$. Owing to crack deflection, crack bridging and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of 7.8 MPa.m$^{1}$2/ for composites added with 39vol.%TiB$_2$under a pressureless annealing at room temperature. The electrical resistivity of the SiC-27vol.%TiB$_2$ composites was negative temperature coefficient resistance(NTCR), and the electrical resistivity of the besides SiC-27vol.%TiB$_2$composites was all positive temperature coefficient resistance(PCTR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.EX>.

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References

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